IJW120R100T1

CoolSiC™ 1200V SiC JFET in combination with the proposed Direct Drive Technology, represents Infineon’s leading edge solution to bring actual designs towards new and so far unattainable efficiency levels. The new SiC JFET consistently reduces the switching losses with respect to the available IGBT based silicon devices and even the conduction losses when its ohmic characteristics are fully exploited.

ParametricIJW120R100T1
VDS  max1200.0V
RDS (on) (multiple)0.1
ID  max26.0A
Ptot  max190.0W
IDpuls  max78.0A
VGS(th)-12
VGS(th)  min-15.0V
Qg72
Rth0.78K/W
Operating Temperature  min-55.0°C
MountingTHT
Qrr118.0nC
Irrm11.0A
Eoss(typ)28.0µJ
Co(er)89.0pF
Co(tr)112.0pF
Budgetary Price €€/1k18.38
Sales Product NameIJW120R100T1
OPNIJW120R100T1FKSA1
Product Statusactive and preferred
Package NamePG-TO247-3
Completely lead freeyes
Halogen freeavailable
RoHS compliantyes
Packing Size240
Packing TypeTUBE
Moisture LevelNA
Summary of Features:
  • Complete solution offer consisting of JFET, P-channel MOSFET and dedicated driver
  • No reverse recovery charge
  • Ohmic output characteristics
  • Monolithically integrated ultrafast body diode
  • Utmost efficiency levels reachable
  • No gate oxides in the structure
Benefits:
  • Direct Drive solution simplifies design in and enables normally-off behavior
  • Extremely low and temperature independent switching losses
  • Reduced conduction losses with respect to IGBT mainly at partial and at light load
  • Low power losses in reverse operation in combination with synchronous rectification
  • Enables either reduced cooling requirements, the adoption of higher operating frequencies resulting in system costs savings by shrinking passive components or enabling a higher power density design in same footprint
  • Utmost reliability
Target Applications:
  • Industrial Drives
  • Solar
  • UPS
  • Show Additional Information
功能框图
Data Sheet
TitleSizeDateVersion
IJW120R100T1,EN1.2 MB29 十月 201302_00
Product Brochure
TitleSizeDateVersion
CoolSiC™ technology；EN2.1 MB09 五月 201601_00
Product Overview
TitleSizeDateVersion
Selection Guide 600V 650V CoolSiC™ Schottky Diodes；EN2 MB14 三月 201401_00
Product Brief
TitleSizeDateVersion
Product Brief CoolSiC™ 1200V SiC JFET；EN776 KB14 五月 2012
Article
TitleSizeDateVersion
Article - Infineon’s 1200V SiC JFET；EN516 KB21 五月 2012
Artikel - Die erste Generation SiCJFET；DE129 KB14 五月 2012
Article Energy Storage in Photovoltaic Systems - Bodos Power Systems - Sept 2014；EN432 KB01 十月 2014
Additional Product Information
TitleSizeDateVersion
Press Release - 1200V CoolSiC™；EN；DE106 KB14 五月 2012
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016；EN4.7 MB22 二月 201600_00
Product Catalogue
TitleSizeDateVersion
Short Form Catalog - May 2016；EN4.4 MB09 五月 201601_00
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2016-03-23_05-34-40_MA001052482_PG-TO247-3-41.pdf；EN28 KB23 三月 201601_00
MCDS_2016-04-04_09-13-07_MA001110758_PG-TO247-3-41.pdf；EN28 KB04 四月 201602_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Altium - v2.0752 KB05 十一月 201302_00
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Cadence - v2.0470 KB05 十一月 201302_00
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Eagle - v2.098 KB05 十一月 201302_00
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Mentor - v2.0624 KB05 十一月 201302_00
Evaluation Boards
BoardFamilyDescriptionStatus
EVAL 1200V COOLSICMOSFET, Gate DriverThis evaluation board features the CoolSiC 1200V JFETs in conjunction with the EiceDRIVER 1EDI30J12CL. Each driver additionally controls a low-voltage p-channel MOSFET. These three devices are building up the Direct Drive JFET Topology. 1EDI30J12CL1EDI30J12CPBSC030P03NS3GIJW120R070T1IJW120R100T1active and preferred
Simulation Models
TitleSizeDateVersion
Simulation Model PSpice 1200V CoolSiC™ SiC JFET；EN3 KB11 十一月 201301_00
Package Data
TitleSizeDateVersion
PG-TO247-3-41 | IJW120R100T1FKSA1；EN413 KB11 四月 201601_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Altium - v2.0752 KB05 十一月 201302_00
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Cadence - v2.0470 KB05 十一月 201302_00
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Eagle - v2.098 KB05 十一月 201302_00
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Mentor - v2.0624 KB05 十一月 201302_00
EN IJW120R100T1
EN IDW40G120C5B
EN IDW40G120C5B
EN IJW120R070T1
EN IJW120R070T1
DE IJW120R070T1
EN IJW120R070T1
EN IJW120R070T1
DE IJW120R070T1
EN IDV20E65D1
EN IDV20E65D1
EN IJW120R100T1
EN IJW120R100T1
EN IJW120R070T1
EN IJW120R100T1
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Altium - v2.0 IDW40G120C5B
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Cadence - v2.0 IDW40G120C5B
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Eagle - v2.0 IDW40G120C5B
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Mentor - v2.0 IDW40G120C5B
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