IKW15N120H3

Infineon’s high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. Furthermore, up to 15% efficiency improvement can be achieved by implementing this technology in your design.

ParametricIKW15N120H3
Budgetary Price €€/1k2.15
Switching FrequencyHighSpeed3 20-100 kHz
PackageTO-247
VCE  max1200.0V
IC (@ 100°)  max15.0A
IC (@ 25°)  max30.0A
ICpuls  max60.0A
VCE(sat)2.05V
Eon1.1mJ
Eoff0.45mJ
td(on)21.0ns
tr34.0ns
td(off)260.0ns
tf14.0ns
QGate75.0nC
IF  max15.0A
IFpuls  max60.0A
VF2.4V
Qrr800.0nC
Irrm7.7A
Sales Product NameIKW15N120H3
OPNIKW15N120H3FKSA1
Product Statusactive and preferred
Package NamePG-TO247-3
Completely lead freeyes
Halogen freeavailable
RoHS compliantyes
Packing Size240
Packing TypeTUBE
Moisture LevelNA
Summary of Features:
  • Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz
  • Low switching losses for high efficiency
  • Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
  • Fast switching behavior with low EMI emissions
  • Optimized diode for target applications, meaning further improvement in switching losses
  • Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
  • Short circuit capability
  • Offering T j(max) of 175°C
  • Packaged with and without freewheeling diode for increased design freedom
Benefits:
  • Excellent cost/performance
  • Low switching and conduction losses
  • Very good EMI behavior
  • A small gate resistor for reduced delay time and voltage overshoot
  • Smaller die sizes -> smaller packages
  • Best-in-class IGBT efficiency and EMI behavior
Target Applications:
  • Welding inverters
  • Solar inverters
  • UPS
  • All hard switching applications
Data Sheet
TitleSizeDateVersion
IKW15N120H3,EN2.1 MB10 二月 201002_01
Application Notes
TitleSizeDateVersion
Application Note Discrete IGBT Datasheet Explanation；EN1.6 MB01 十月 201501_00
Application Note IGBT Definition of Junction Temperature；EN84 KB09 四月 2009
Recommendations for Assembly of Infineon TO Packages；EN1.1 MB09 四月 2009
Description: IGBT (Insulated Gate Bipolar Transistor)；EN625 KB19 六月 2010
The Reverse Behavior of the NPT-IGBT in its On-State；EN167 KB19 六月 2010
Connecting IGBTs in Parallel (Fundamentals)；EN97 KB19 六月 2010
第三代高速 (HighSpeed 3) 1200V IGBT - 高开关速度优化的新一代IGBT系列；CN；EN1.4 MB26 八月 2013
Recommendations for Screw Tightening Torque for IGBT Discrete Devices；EN983 KB29 十一月 2013
Product Brief
TitleSizeDateVersion
The new 1200V and 600V IGBT HighSpeed 3 family, optimized in every respect；EN454 KB04 六月 2013
Product Family Overview
TitleSizeDateVersion
HighSpeed 3 - The Next Generation High Speed IGBT Family；EN501 KB10 五月 2010
Additional Product Information
TitleSizeDateVersion
Press Release - Infineon Breaks Switching and Efficiency Limits with 3rd Generation High Speed 600 V and 1200 V IGBTs；EN88 KB05 五月 2010
Nomenclature Guide IGBT Discretes and Diodes；EN478 KB27 四月 201601_00
Application Brochure
TitleSizeDateVersion
Application Brochure Major Home Appliance；EN4.4 MB24 五月 201601_00
Solutions for Industrial Drives；EN2.4 MB27 四月 201609_00
Solutions for construction, commercial and agricultural vehicles (CAV)；EN6.7 MB30 七月 2014
Efficient Solutions for Industrial Motor Control and Drives；EN2 MB01 三月 201401_00
Product Selection Guide
TitleSizeDateVersion
Selection Guide IGBT Discretes；EN989 KB12 四月 201600_00
NEW! Power Management Selection Guide 2016；EN4.7 MB22 二月 201600_00
Product Catalogue
TitleSizeDateVersion
Short Form Catalog - May 2016；EN4.4 MB09 五月 201601_00
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2013-08-29_05-19-46_MA000753310_PG-TO247-3-41.pdf；EN24 KB31 十月 201301_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints & Symbols - Discrete IGBT - Altium - v2.0；EN926 KB20 十一月 201302_00
PCB Footprints & Symbols - Discrete IGBT - Cadence - v2.0；EN603 KB20 十一月 201302_00
PCB Footprints & Symbols - Discrete IGBT - Eagle - v2.0；EN117 KB20 十一月 201302_00
PCB Footprints & Symbols - Discrete IGBT - Mentor - v2.0；EN776 KB21 十一月 201302_00
Evaluation Boards
BoardFamilyDescriptionStatus
EVAL-1ED020I12-BTGate Driver, IGBT DiscreteEvaluation Board for 1ED020I12-BT - Galvanic isolated single channel IGBT driver IC with CT technology for 600V/1200V IGBTs.Driving IGBTsFor equipping 1ED 1200V single channel EiceDRIVER™active and preferred
Simulation Models
TitleSizeDateVersion
Simulation Model - PSpice IGBT 1200V HighSpeed 3；EN7 KB11 七月 201300_05
Package Data
TitleSizeDateVersion
PG-TO247-3-41 | IKW15N120H3FKSA1；EN471 KB11 四月 201601_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints & Symbols - Discrete IGBT - Altium - v2.0；EN926 KB20 十一月 201302_00
PCB Footprints & Symbols - Discrete IGBT - Cadence - v2.0；EN603 KB20 十一月 201302_00
PCB Footprints & Symbols - Discrete IGBT - Eagle - v2.0；EN117 KB20 十一月 201302_00
PCB Footprints & Symbols - Discrete IGBT - Mentor - v2.0；EN776 KB21 十一月 201302_00
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