IPB100N10S3-05

ParametricIPB100N10S3-05
RDS (on) (@10V)  max4.8mΩ
RDS (on)  max4.8mΩ
QG135.0nC
VDS  max100.0V
ID  max100.0A
RthJC  max0.5K/W
Ptot  max300.0W
IDpuls  max400.0A
VGS(th)  min  max2.0V  4.0V
Sales Product NameIPB100N10S3-05
OPNIPB100N10S305ATMA1
Product Statusnot for new design
Package NamePG-TO263-3
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size1000
Packing TypeTAPE & REEL
Moisture Level1
Summary of Features:
  • N-channel - Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green product (RoHS compliant)
  • 100% Avalanche tested
Benefits:
  • highest current capability 180A
  • low switching and conduction power losses for high thermal efficiency
  • robust packages with superior quality and reliability
  • optimized total gate charge enables smaller driver output stages
Target Applications:
  • 48V inverter
  • 48V DC/DC
  • HID lighting
Data Sheet
TitleSizeDateVersion
IPP_B_I100N10S3-05,EN187 KB16 六月 200801_00
Product Brochure
TitleSizeDateVersion
Automotive MOSFETs Product BrochureEN3.5 MB26 五月 201501_00
Application Notes
TitleSizeDateVersion
Repetitive Avalanche of Automotive MOSFETs3.7 MB03 三月 201401_00
Application Brochure
TitleSizeDateVersion
Application Brochure - Infineon Solutions for TransportationEN6.9 MB01 六月 201300_00
Product Selection Guide
TitleSizeDateVersion
Automotive Power Selection GuideEN10.6 MB19 一月 201601_01
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2013-08-29_05-14-59_MA000389808_PG-TO263-3-2.pdf23 KB31 十月 201301_00
Simulation Models
TitleSizeDateVersion
OptiMOS-T_100V_PSpice124 KB31 一月 2008
EN IPP100N10S3-05
EN IPP80P03P4-05
Repetitive Avalanche of Automotive MOSFETs IPP80P03P4-05
EN power-stage-3x3-and-5x6
EN TLE8203E
MCDS_2013-08-29_05-14-59_MA000389808_PG-TO263-3-2.pdf IPB100N10S3-05
OptiMOS-T_100V_PSpice IPP50N10S3L-16