IPB160N04S4L-H1

ParametricIPB160N04S4L-H1
RDS (on) (@10V)  max1.5mΩ
RDS (on) (@4.5V)  max2.0mΩ
QG146.0nC
VDS  max40.0V
ID  max160.0A
RthJC  max0.9K/W
Ptot  max167.0mW
IDpuls  max640.0A
VGS(th)  min  max1.2V  2.2V
Sales Product NameIPB160N04S4L-H1
OPNIPB160N04S4LH1ATMA1
Product Statusactive and preferred
Package NamePG-TO263-7
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size1000
Packing TypeTAPE & REEL
Moisture Level1
Summary of Features:
  • N-channel Logic Level - Enhancement mode
  • AEC qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green product (RoHS compliant)
  • 100% Avalanche teste
Data Sheet
TitleSizeDateVersion
IPB160N04S4L DataSheet,EN201 KB06 六月 201401_00
Product Brochure
TitleSizeDateVersion
Automotive MOSFETs Product BrochureEN3.5 MB26 五月 201501_00
Application Notes
TitleSizeDateVersion
Repetitive Avalanche of Automotive MOSFETs3.7 MB03 三月 201401_00
Application Brochure
TitleSizeDateVersion
Application Brochure - Infineon Solutions for TransportationEN6.9 MB01 六月 201300_00
Product Selection Guide
TitleSizeDateVersion
Automotive Power Selection GuideEN10.6 MB19 一月 201601_01
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2015-11-02_07-48-00_MA001104548_PG-TO263-7-3.pdfEN28 KB02 十一月 201501_00
Simulation Models
TitleSizeDateVersion
OptiMOS-T2_40V_PSpiceEN160 KB05 二月 201601_01
Package Data
TitleSizeDateVersion
PG-TO263-7-3 | IPB160N04S4LH1ATMA1EN482 KB11 四月 201601_00
EN IPB160N04S4L-H1
EN IPP80P03P4-05
Repetitive Avalanche of Automotive MOSFETs IPP80P03P4-05
EN power-stage-3x3-and-5x6
EN TLE8203E
EN IPB160N04S4L-H1
EN IPP70N04S4-06
EN IPB160N04S4L-H1