IPB70N10SL-16

ParametricIPB70N10SL-16
RDS (on) (@10V)  max16.0mΩ
RDS (on)  max16.0mΩ
RDS (on) (@4.5V)  max25.0mΩ
QG160.0nC
VDS  max100.0V
ID  max70.0A
RthJC  max0.6K/W
Ptot  max250.0W
IDpuls  max280.0A
VGS(th)  min  max1.2V  2.0V
Sales Product NameIPB70N10SL-16
OPNIPB70N10SL16ATMA1
Product Statusnot for new design
Package NamePG-TO263-3
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size1000
Packing TypeTAPE & REEL
Moisture Level1
Summary of Features:
  • N-Channel
  • Enhancement mode
  • Logic Level
  • 175°C operating temperature
  • Avalanche rated
  • dv/dt rated
  • Green Package (lead free)
Benefits:
  • low RDS (on) in trench technology  - down to 4.8 mOhm
  • highest current capability 180A
  • low switching and conduction power losses for high thermal efficiency
  • robust packages with superior quality and reliability
  • optimized total gate charge enables smaller driver output stages
Target Applications:
  • 48V inverter
  • 48V DC/DC
  • HID lighting
Data Sheet
TitleSizeDateVersion
IPB 70N10SL-16 Data Sheet,EN124 KB13 七月 201201_01
Product Brochure
TitleSizeDateVersion
Automotive MOSFETs Product BrochureEN3.5 MB26 五月 201501_00
Application Notes
TitleSizeDateVersion
Repetitive Avalanche of Automotive MOSFETs3.7 MB03 三月 201401_00
Application Brochure
TitleSizeDateVersion
Application Brochure - Infineon Solutions for TransportationEN6.9 MB01 六月 201300_00
Product Selection Guide
TitleSizeDateVersion
Automotive Power Selection GuideEN10.6 MB19 一月 201601_01
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2013-08-29_07-37-53_MA000532836_PG-TO263-3-2.pdf24 KB31 十月 201301_00
EN IPP70N10SL-16
EN IPP80P03P4-05
Repetitive Avalanche of Automotive MOSFETs IPP80P03P4-05
EN power-stage-3x3-and-5x6
EN TLE8203E
MCDS_2013-08-29_07-37-53_MA000532836_PG-TO263-3-2.pdf IPB70N10SL-16