IPB80N06S2-05

ParametricIPB80N06S2-05
RDS (on) (@10V)  max4.8mΩ
RDS (on)  max4.8mΩ
QG130.0nC
VDS  max55.0V
ID  max80.0A
RthJC  max0.5K/W
Ptot  max300.0W
IDpuls  max320.0A
VGS(th)  min  max2.1V  4.0V
Sales Product NameIPB80N06S2-05
OPNIPB80N06S205ATMA1
Product Statusdiscontinued
Package NamePG-TO263-3
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size1000
Packing TypeTAPE & REEL
Moisture Level1
Summary of Features:
  • • N-channel - Enhancement mode
  • • Automotive AEC Q101 qualified
  • • MSL1 up to 260°C peak reflow
  • • 175°C operating temperature
  • • Green package (lead free)
  • • Ultra low Rds(on)
  • • 100% Avalanche tested
Benefits:
  • world's lowest RDS at 55V (on)  in planar technology
  • highest current capability
  • lowest switching and conduction power losses for highest thermal efficiency
  • robust packages with superior quality and reliability
  • Optimized total gate charge enables smaller driver output stages
Target Applications:
  • Valves control
  • Solenoids control
  • Lighting
  • Single-ended motors
Data Sheet
TitleSizeDateVersion
IPP_B80N06S2-05 Data Sheet,EN155 KB12 七月 201201_00
Product Brochure
TitleSizeDateVersion
Automotive MOSFETs Product BrochureEN3.5 MB26 五月 201501_00
Application Notes
TitleSizeDateVersion
Repetitive Avalanche of Automotive MOSFETs3.7 MB03 三月 201401_00
Application Brochure
TitleSizeDateVersion
Application Brochure - Infineon Solutions for TransportationEN6.9 MB01 六月 201300_00
Product Selection Guide
TitleSizeDateVersion
Automotive Power Selection GuideEN10.6 MB19 一月 201601_01
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2013-08-29_07-16-12_MA000275841_PG-TO263-3-2.pdf24 KB31 十月 201301_00
Simulation Models
TitleSizeDateVersion
PSpice-OptimOS175 KB11 六月 201201_00
EN IPP80N06S2-05
EN IPP80P03P4-05
Repetitive Avalanche of Automotive MOSFETs IPP80P03P4-05
EN power-stage-3x3-and-5x6
EN TLE8203E
MCDS_2013-08-29_07-16-12_MA000275841_PG-TO263-3-2.pdf IPB80N06S2-05
PSpice-OptimOS IPP77N06S2-12