IPB80N07S4-05

ParametricIPB80N07S4-05
RDS (on) (@10V)  max5.2mΩ
RDS (on)  max5.2mΩ
QG69.0nC
VDS  max75.0V
ID  max80.0A
RthJC  max1.0K/W
Ptot  max150.0W
IDpuls  max320.0A
VGS(th)  min  max2.0V  4.0V
Summary of Features:
  • N-channel - Enhancement mode
  • AEC qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested
Data Sheet
TitleSizeDateVersion
IPP-B-I80N07S4-05 Data Sheet413 KB17 七月 201401_00
Product Brochure
TitleSizeDateVersion
Automotive MOSFETs Product BrochureEN3.5 MB26 五月 201501_00
Application Notes
TitleSizeDateVersion
Repetitive Avalanche of Automotive MOSFETs3.7 MB03 三月 201401_00
Application Brochure
TitleSizeDateVersion
Application Brochure - Infineon Solutions for TransportationEN6.9 MB01 六月 201300_00
Product Selection Guide
TitleSizeDateVersion
Automotive Power Selection GuideEN10.6 MB19 一月 201601_01
Simulation Models
TitleSizeDateVersion
Infineon-OptiMOS-T2_75V_80V_PSpice-SM-v01_00-ENEN122 KB29 七月 201501_00
IPP-B-I80N07S4-05 Data Sheet IPP80N07S4-05
EN IPP80P03P4-05
Repetitive Avalanche of Automotive MOSFETs IPP80P03P4-05
EN power-stage-3x3-and-5x6
EN TLE8203E
EN IPP80N07S4-05