IPB80P03P4-05

ParametricIPB80P03P4-05
RDS (on) (@10V)  max4.7mΩ
RDS (on)  max4.7mΩ
QG100.0nC
VDS  max-30.0V
ID  max-80.0A
RthJC  max1.1K/W
Ptot  max137.0W
IDpuls  max-320.0A
VGS(th)  min  max-2.0V  -4.0V
Sales Product NameIPB80P03P4-05
OPNIPB80P03P405ATMA1
Product Statusactive and preferred
Package NamePG-TO263-3
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size1000
Packing TypeTAPE & REEL
Summary of Features:
  • P-channel - Normal Level - Enhancement mode
  • AEC qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green package (RoHS compliant)
  • 100% Avalanche tested
Benefits:
  • No charge pump required for high side drive.
  • Simple interface drive circuit
  • World's lowest RDSon at 30V
  • Highest current capability
  • Lowest switching and conduction power losses for highest thermal efficiency
  • Robust packages with superior quality and reliability
  • Standard packages TO-252, TO-263, TO-220, TO-262
Target Applications:
  • High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors)
  • Bridge configuration could be realized with 30V P-Channel as high side device with no need of charge pump
Data Sheet
TitleSizeDateVersion
IPP_B_I80P03P4-05,EN169 KB05 十二月 200801_00
Product Brochure
TitleSizeDateVersion
Automotive MOSFETs Product BrochureEN3.5 MB26 五月 201501_00
Application Notes
TitleSizeDateVersion
Repetitive Avalanche of Automotive MOSFETs3.7 MB03 三月 201401_00
Application Brochure
TitleSizeDateVersion
Application Brochure - Infineon Solutions for TransportationEN6.9 MB01 六月 201300_00
Product Selection Guide
TitleSizeDateVersion
Automotive Power Selection GuideEN10.6 MB19 一月 201601_01
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2013-08-29_07-45-05_MA000462542_PG-TO263-3-2.pdf24 KB31 十月 201301_00
Simulation Models
TitleSizeDateVersion
OptiMOS_P2_PSpice.zipEN92 KB07 一月 201500_00
Package Data
TitleSizeDateVersion
PG-TO263-3-2 | IPB80P03P405ATMA1EN416 KB11 四月 201601_00
EN IPP80P03P4-05
EN IPP80P03P4-05
Repetitive Avalanche of Automotive MOSFETs IPP80P03P4-05
EN power-stage-3x3-and-5x6
EN TLE8203E
MCDS_2013-08-29_07-45-05_MA000462542_PG-TO263-3-2.pdf IPB80P03P4-05
EN IPP80P03P4-05
EN IPB80P03P4-05