Parametric | IPC055N03L3 |
---|
RDS (on) | 1.7mΩ |
---|
VGS(th)
min
max | 1.0V
2.2V |
---|
Technology | OptiMOS™ 3 |
---|
VDS | 30 V |
---|
Die Size
(X) | 1.68 mm |
---|
Die Size
(Y) | 3.28 mm |
---|
Die Size
(Area) | 5.51 mm² |
---|
Thickness | 175 |
---|
Mode | Enhancement |
---|
EAS/Avalanche Energy | 90.0mJ |
---|
Die Size
(-)
min
max | 1.68mm²
3.28mm² |
---|
Budgetary Price €/1k | 0.37 |
---|
Sales Product Name | IPC055N03L3 |
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OPN | IPC055N03L3X1SA1 |
---|
Product Status | active and preferred |
---|
Package Name | -- |
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Completely lead free | yes |
---|
Halogen free | yes |
---|
RoHS compliant | yes |
---|
Packing Size | 1 |
---|
Packing Type | WAFER SAWN |
---|
| |
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| Summary of Features:- Best-in-class on-state resistance
- Benchmark switching performance due to lowest Figure of Merits R on x Q g and R on x Q gd
- Low gate resistance
- Excellent 5V gate drive performance
- Optimized EMI behavior based on an integrated damping network
- Super Barrier Diode may improved efficiency by upwards of 2%.
Benefits:- Save overall system costs by reducing the number of phases in multiphase converters
- Highest efficiency
- Smallest footprint and highest power density with S3O8 & CanPAK™
- Easy to design-in
- Can be driven from 5V system rail giving excellent performance
Target Applications:- On board power for server
- Power management for mobile computing
- Synchronous rectification
- High power density point of load converters
|