IPC300N20N3

With OptiMOS™ 200V and 250V Infineon continues to deliver Best-in-Class on-state resistance (R DS(on)) power MOSFETs with unique performance. The leading R DS(on) and Figure of Merit (FOM) characteristics reduce power losses, improve overall efficiency and increase power density. The 200V and 250V product families are optimized for applications such as Lighting for 110V AC networks, HID lamps, DC-DC converters and Power over Ethernet (PoE).

ParametricIPC300N20N3
RDS (on)9.2mΩ
VGS(th)  min  max2.0V  4.0V
TechnologyOptiMOS™ 3
VDS200 V
Die Size (X)5 mm
Die Size (Y)6 mm
Die Size (Area)30 mm²
Thickness250
ModeEnhancement
EAS/Avalanche Energy40.0mJ
Die Size (-)  min  max5.0mm²  6.0mm²
Sales Product NameIPC300N20N3
OPNIPC300N20N3X7SA1
Product Statusactive and preferred
Package Name--
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size1
Packing TypeHORIZONTAL FRAME SHIPPER
Summary of Features:
  • „Industry’s lowest R DS(on)
  • „Lowest Q g and Q gd
  • „World’s lowest FOM
Benefits:
  • Highest efficiency
  • „Highest power density
  • „Lowest board space consumption
  • „Less paralleling required
  • „System cost improvement
  • „Easy-to-design products
  • „Environmentally friendly
Target Applications:
  • „Lighting for 110V AC networks
  • „Power over Ethernet (PoE)
  • „DC-DC for  Telecom and Industrial application
  • „ HID lamps
Data Sheet
TitleSizeDateVersion
IPC300N20N3539 KB30 七月 201402_05
Application Notes
TitleSizeDateVersion
Application Note Introduction to Infineons Power MOSFET Simulation ModelsEN701 KB30 十一月 201501_00
Application Note OptiMOS™ Datasheet ExplanationEN663 KB01 十二月 2012
Application Note Introduction to Infineon`s Simulation Models for Power MOSFETs701 KB06 三月 2014
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
IPC300N20N3 IPC300N20N3
EN power-stage-3x3-and-5x6
EN power-stage-3x3-and-5x6
LEDs from 10ma to 700mA driven by BCR4XX (AN101) BC817SU
EN IDV20E65D1