IPD26N06S2L-35

ParametricIPD26N06S2L-35
RDS (on) (@10V)  max35.0mΩ
RDS (on)  max35.0mΩ
RDS (on) (@4.5V)  max47.0mΩ
QG10.0nC
VDS  max55.0V
ID  max30.0A
RthJC  max2.2K/W
Ptot  max68.0W
IDpuls  max120.0A
VGS(th)  min  max1.2V  2.0V
Sales Product NameIPD26N06S2L-35
OPNIPD26N06S2L35ATMA2
Product Statusactive and preferred
Package NamePG-TO252-3
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size2500
Packing TypeTAPE & REEL
Moisture Level1
Summary of Features:
  • • N-channel - Enhancement mode
  • • Automotive AEC Q101 qualified
  • • MSL1 up to 260°C peak reflow
  • • 175°C operating temperature
  • • Green package (lead free)
  • • Ultra low Rds(on)
  • • 100% Avalanche tested
Benefits:
  • world's lowest RDS at 55V (on)  in planar technology
  • highest current capability
  • lowest switching and conduction power losses for highest thermal efficiency
  • robust packages with superior quality and reliability
  • Optimized total gate charge enables smaller driver output stages
Target Applications:
  • Valves control
  • Solenoids control
  • Lighting
  • Single-ended motors
Data Sheet
TitleSizeDateVersion
IPD26N06S2L-35 Data Sheet,EN149 KB12 七月 201201_00
Product Brochure
TitleSizeDateVersion
Automotive MOSFETs Product BrochureEN3.5 MB26 五月 201501_00
Application Notes
TitleSizeDateVersion
Repetitive Avalanche of Automotive MOSFETs3.7 MB03 三月 201401_00
Application Brochure
TitleSizeDateVersion
Application Brochure - Infineon Solutions for TransportationEN6.9 MB01 六月 201300_00
Product Selection Guide
TitleSizeDateVersion
Automotive Power Selection GuideEN10.6 MB19 一月 201601_01
Simulation Models
TitleSizeDateVersion
PSpice-OptimOS175 KB11 六月 201201_00
Package Data
TitleSizeDateVersion
PG-TO252-3-11 | IPD26N06S2L35ATMA2EN532 KB11 四月 201601_00
EN IPD26N06S2L-35
EN IPP80P03P4-05
Repetitive Avalanche of Automotive MOSFETs IPP80P03P4-05
EN power-stage-3x3-and-5x6
EN TLE8203E
PSpice-OptimOS IPP77N06S2-12
EN IPD26N06S2L-35