IPD60N10S4L-12

ParametricIPD60N10S4L-12
RDS (on) (@10V)  max12.0mΩ
RDS (on)  max12.0mΩ
RDS (on) (@4.5V)  max15.0mΩ
QG38.0nC
VDS  max100.0V
ID  max60.0A
RthJC  max1.6K/W
Ptot  max94.0W
IDpuls  max240.0A
VGS(th)  min  max1.1V  2.1V
Sales Product NameIPD60N10S4L-12
OPNIPD60N10S4L12ATMA1
Product Statusactive and preferred
Package NamePG-TO252-3
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size2500
Packing TypeTAPE & REEL
Summary of Features:
  • N-channel - Enhancement mode
  • AEC qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested
Benefits:
  • highest current capability 180A
  • low switching and conduction power losses for high thermal efficiency
  • robust packages with superior quality and reliability
  • optimized total gate charge enables smaller driver output stages
Target Applications:
  • 48V inverter
  • 48V DC/DC
  • HID lighting
Data Sheet
TitleSizeDateVersion
IPD60N10S4L-12 Data Sheet,EN131 KB15 五月 201201_00
Product Brochure
TitleSizeDateVersion
Automotive MOSFETs Product BrochureEN3.5 MB26 五月 201501_00
Application Notes
TitleSizeDateVersion
Repetitive Avalanche of Automotive MOSFETs3.7 MB03 三月 201401_00
Application Brochure
TitleSizeDateVersion
Application Brochure - Infineon Solutions for TransportationEN6.9 MB01 六月 201300_00
Product Selection Guide
TitleSizeDateVersion
Automotive Power Selection GuideEN10.6 MB19 一月 201601_01
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2013-08-29_07-33-57_MA000940572_PG-TO252-3-313.pdf24 KB31 十月 201301_00
Simulation Models
TitleSizeDateVersion
OptiMOS-T2_100V_PSpiceEN68 KB28 四月 201501_00
Package Data
TitleSizeDateVersion
PG-TO252-3-313 | IPD60N10S4L12ATMA1EN481 KB11 四月 201601_00
EN IPD60N10S4L-12
EN IPP80P03P4-05
Repetitive Avalanche of Automotive MOSFETs IPP80P03P4-05
EN power-stage-3x3-and-5x6
EN TLE8203E
MCDS_2013-08-29_07-33-57_MA000940572_PG-TO252-3-313.pdf IPD60N10S4L-12
EN IPP120N10S4-05
EN IPD60N10S4L-12