IPG20N10S4L-35A

ParametricIPG20N10S4L-35A
RDS (on) (@10V)  max35.0mΩ
RDS (on) (@4.5V)  max45.0mΩ
QG17.4nC
VDS  max100.0V
ID  max20.0A
RthJC  max3.5K/W
Ptot  max43.0W
IDpuls  max80.0A
VGS(th)  min  max1.1V  2.1V
Sales Product NameIPG20N10S4L-35A
OPNIPG20N10S4L35AATMA1
Product Statusactive and preferred
Package NamePG-TDSON-8
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size5000
Packing TypeTAPE & REEL
Summary of Features:
  • Dual N-channel Logic Level - Enhancement mode
  • AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested
  • Feasible for automatic optical inspection (AOI)
Data Sheet
TitleSizeDateVersion
IPG20N10S4L-35A Data Sheet195 KB21 八月 201401_00
Product Brochure
TitleSizeDateVersion
Automotive MOSFETs Product BrochureEN3.5 MB26 五月 201501_00
Application Notes
TitleSizeDateVersion
Repetitive Avalanche of Automotive MOSFETs3.7 MB03 三月 201401_00
Application Brochure
TitleSizeDateVersion
Application Brochure - Infineon Solutions for TransportationEN6.9 MB01 六月 201300_00
Product Selection Guide
TitleSizeDateVersion
Automotive Power Selection GuideEN10.6 MB19 一月 201601_01
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2013-08-29_07-32-37_MA001094666_PG-TDSON-8-10.pdf23 KB31 十月 201301_00
Package Data
TitleSizeDateVersion
PG-TDSON-8-10 | IPG20N10S4L35AATMA1EN592 KB11 四月 201601_00
IPG20N10S4L-35A Data Sheet IPG20N10S4L-35A
EN IPP80P03P4-05
Repetitive Avalanche of Automotive MOSFETs IPP80P03P4-05
EN power-stage-3x3-and-5x6
EN TLE8203E
MCDS_2013-08-29_07-32-37_MA001094666_PG-TDSON-8-10.pdf IPG20N10S4L-35A
EN IPG20N10S4L-35A