IPI120N04S3-02

ParametricIPI120N04S3-02
RDS (on) (@10V)  max2.3mΩ
QG160.0nC
VDS  max40.0V
ID  max120.0A
RthJC  max0.5K/W
Ptot  max300.0W
IDpuls  max480.0A
VGS(th)  min  max2.1V  4.0V
Sales Product NameIPI120N04S3-02
OPNIPI120N04S302AKSA1
Product Statusnot for new design
Package NamePG-TO262-3
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size500
Packing TypeTUBE
Moisture Level1
Summary of Features:
  • N-channel - Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green package (RoHS compliant)
  • Ultra low Rds(on)
  • 100% Avalanche tested
Benefits:
  • world's lowest RDS at 40V (on)
  • highest current capability
  • lowest switching and conduction power losses for highest thermal efficiency
  • robust packages with superior quality and reliability
  • Optimized total gate charge enables smaller driver output stages
Target Applications:
  • OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.
  • Thus OptiMOS-T2 40V products based on Infineon’s advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.
Data Sheet
TitleSizeDateVersion
IPP 120N04S3-02,EN191 KB12 七月 201201_00
Product Brochure
TitleSizeDateVersion
Automotive MOSFETs Product BrochureEN3.5 MB26 五月 201501_00
Application Notes
TitleSizeDateVersion
Repetitive Avalanche of Automotive MOSFETs3.7 MB03 三月 201401_00
Application Brochure
TitleSizeDateVersion
Application Brochure - Infineon Solutions for TransportationEN6.9 MB01 六月 201300_00
Product Selection Guide
TitleSizeDateVersion
Automotive Power Selection GuideEN10.6 MB19 一月 201601_01
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2013-08-29_07-32-05_MA000361816_PG-TO262-3-1.pdf24 KB31 十月 201301_00
Simulation Models
TitleSizeDateVersion
OptiMOS_T_40V_PSpice.zip69 KB18 九月 2007
Package Data
TitleSizeDateVersion
PG-TO262-3-1 | IPI120N04S302AKSA1EN436 KB11 四月 201601_00
EN IPP120N04S3-02
EN IPP80P03P4-05
Repetitive Avalanche of Automotive MOSFETs IPP80P03P4-05
EN power-stage-3x3-and-5x6
EN TLE8203E
MCDS_2013-08-29_07-32-05_MA000361816_PG-TO262-3-1.pdf IPI120N04S3-02
OptiMOS_T_40V_PSpice.zip IPP80N04S3-06
EN IPI120N04S3-02