IRF100S201

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

ParametricIRF100S201
PackageD2PAK (TO-263)
VDS  max100.0V
RDS (on) (@10V)  max4.2mΩ
RDS (on)  max4.2mΩ
PolarityN
ID  max136.0A
ID (@ TC=100°C)  max136.0A
ID (@ TC=25°C)  max192.0A
Ptot  max441.0W
QG170.0nC
MountingSMD
Tj  max175.0°C
Moisture Sensitivity Level1
Qgd45.0nC
RthJC  max0.34K/W
VGS  max20.0V
Sales Product NameIRF100S201
OPNIRF100S201
Product Statusactive
Package NameD2PAK
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size800
Packing TypeTAPE & REEL LEFT
Moisture Level1
Benefits:
  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
  • Fully Characterized Capacitance and Avalanche SOA
  • Enhanced body diode dV/dt and dI/dt Capability
  • Lead-Free, RoHS Compliant, Halogen-Free
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF100B201,EN617 KB01 八月 2015
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
EN IRF100B201
EN IDV20E65D1