IRF135B203

135V Single N-Channel HEXFET Power MOSFET in a TO-220 package

ParametricIRF135B203
PackageTO-220
VDS  max135.0V
RDS (on) (@10V)  max8.4mΩ
PolarityN
ID (@ TC=100°C)  max91.0A
ID  max91.0A
ID (@ TC=25°C)  max129.0A
Ptot  max441.0W
QG180.0nC
MountingTHT
Qgd43.0nC
RthJC  max175.0K/W
VGS  max20.0V
RthJC  max0.34K/W
Sales Product NameIRF135B203
OPNIRF135B203
Product Statusactive and preferred
Package NameTO220
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTUBE
Moisture LevelTHP
Benefits:
  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
  • Fully Characterized Capacitance and Avalanche SOA
  • Enhanced body diode dV/dt and dI/dt Capability
  • Lead-Free, RoHS Compliant, Halogen-Free
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF135S203,EN580 KB09 八月 2015
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
EN IRF135B203
EN IDV20E65D1