IRF200B211

200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

ParametricIRF200B211
PackageTO-220
VDS  max200.0V
RDS (on) (@10V)  max170.0mΩ
RDS (on)  max170.0mΩ
PolarityN
ID (@ TC=100°C)  max9.0A
ID  max9.0A
ID (@ TC=25°C)  max12.0A
Ptot  max80.0W
QG15.3nC
MountingTHT
Tj  max175.0°C
Qgd5.6nC
RthJC  max1.88K/W
VGS  max20.0V
Sales Product NameIRF200B211
OPNIRF200B211
Product Statusactive and preferred
Package NameTO220
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTUBE
Moisture LevelTHP
Benefits:
  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
  • Fully Characterized Capacitance and Avalanche SOA
  • Enhanced body diode dV/dt and dI/dt Capability
  • Lead-Free, RoHS Compliant, Halogen-Free
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF200B211,EN545 KB01 八月 2015
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRF200B211EN2 KB01 八月 2015
Saber Model - IRF200B211EN2 KB01 八月 2015
EN IRF200B211
EN IDV20E65D1
EN IRF200B211
EN IRF200B211