IRF5210

-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

ParametricIRF5210
PackageTO-220
VDS  max-100.0V
RDS (on) (@10V)  max60.0mΩ
RDS (on)  max60.0mΩ
PolarityP
ID (@ TC=25°C)  max-40.0A
ID (@ TC=100°C)  max-29.0A
ID  max-29.0A
Ptot  max200.0W
QG120.0nC
RthJC  max0.75K/W
MountingTHT
Qgd64.7nC
Tj  max175.0°C
VGS  max20.0V
Sales Product NameIRF5210
OPNIRF5210PBF
Product Statusactive
Package NameTO220
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTUBE
Moisture LevelTHP
Benefits:
  • RoHS Compliant
  • Low RDS(on)
  • Industry-leading quality
  • Dynamic dv/dt Rating
  • Fast Switching
  • Fully Avalanche Rated
  • 175°C Operating Temperature
  • P-Channel MOSFET
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF5210,EN190 KB23 六月 2004
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
Simulation Models
TitleSizeDateVersion
Saber Model - IRF5210EN2 KB18 六月 2001
Spice Model - IRF5210EN2 KB18 六月 2001
EN IRF5210
EN IDV20E65D1
EN IRF5210
EN IRF5210