IRF60DM206

60V Single N-Channel HEXFET Power MOSFET in a DirectFET ME package

ParametricIRF60DM206
PackageDirectFET ME
VDS  max60.0V
RDS (on) (@10V)  max2.9mΩ
RDS (on)  max2.9mΩ
PolarityN
ID  max82.0A
ID (@ TC=100°C)  max82.0A
ID (@ TC=25°C)  max130.0A
Ptot  max96.0W
QG133.0nC
MountingSMD
Tj  max150.0°C
Moisture Sensitivity Level1
Qgd40.0nC
RthJC  max1.3K/W
VGS  max20.0V
Sales Product NameIRF60DM206
OPNIRF60DM206
Product Statusactive and preferred
Package NameDIRECTFET
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size4800
Packing TypeTAPE & REEL
Moisture Level3
Benefits:
  • Improved gate, avalanche and dynamic dv/dt ruggedness
  • Fully characterized capacitance and avalanche SOA
  • Enhanced body diode dv/dt and di/dt capability
  • Lead-free, RoHS compliant
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF60DM206,EN524 KB01 八月 2015
Product Brief
TitleSizeDateVersion
StrongIRFET™ in Medium Can DirectFET™ PackageEN195 KB14 十月 2015
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
Simulation Models
TitleSizeDateVersion
Spice File - IRF60DM206EN2 KB07 一月 2016
Saber File - IRF60DM206EN2 KB07 一月 2016
EN IRF60DM206
EN IRF7780M
EN IDV20E65D1
EN IRF60DM206
EN IRF60DM206