IRF630N

200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

ParametricIRF630N
PackageTO-220
VDS  max200.0V
RDS (on)  max300.0mΩ
RDS (on) (@10V)  max300.0mΩ
PolarityN
ID (@ TC=100°C)  max6.8A
ID  max6.8A
ID (@ TC=25°C)  max9.5A
Ptot  max82.0W
QG23.3nC
MountingTHT
Tj  max175.0°C
Qgd11.3nC
RthJC  max1.83K/W
VGS  max20.0V
Sales Product NameIRF630N
OPNIRF630NPBF
Product Statusactive
Package NameTO220
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTUBE
Moisture LevelTHP
Benefits:
  • RoHS Compliant
  • Low RDS(on)
  • Industry-leading quality
  • Dynamic dv/dt Rating
  • Fast Switching
  • Fully Avalanche Rated
  • 175°C Operating Temperature
Target Applications:
  • Consumer Full-Bridge
  • Full-Bridge
  • Push-Pull
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF630N,EN335 KB03 八月 2004
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
EN IRF630N
EN IDV20E65D1