IRF640N

200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

ParametricIRF640N
PackageTO-220
VDS  max200.0V
RDS (on)  max150.0mΩ
RDS (on) (@10V)  max150.0mΩ
PolarityN
ID  max13.0A
ID (@ TC=100°C)  max13.0A
ID (@ TC=25°C)  max18.0A
Ptot  max150.0W
QG44.7nC
MountingTHT
Tj  max175.0°C
Qgd22.0nC
RthJC  max1.0K/W
VGS  max20.0V
Sales Product NameIRF640N
OPNIRF640NPBF
Product Statusactive
Package NameTO220
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTUBE
Moisture LevelTHP
Benefits:
  • RoHS Compliant
  • Low RDS(on)
  • Industry-leading quality
  • Dynamic dv/dt Rating
  • Fast Switching
  • Fully Avalanche Rated
  • 175°C Operating Temperature
Target Applications:
  • Consumer Full-Bridge
  • Full-Bridge
  • Push-Pull
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF640N,EN336 KB03 八月 2004
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
EN IRF640N
EN IDV20E65D1