IRF640NS

200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

ParametricIRF640NS
PackageD2PAK (TO-263)
VDS  max200.0V
RDS (on) (@10V)  max150.0mΩ
RDS (on)  max150.0mΩ
PolarityN
ID (@ TC=100°C)  max13.0A
ID  max13.0A
ID (@ TC=25°C)  max18.0A
Ptot  max150.0W
QG44.7nC
MountingSMD
Moisture Sensitivity Level1
RthJC  max1.0K/W
VGS  max20.0V
Qgd22.0nC
Tj  max175.0°C
Sales Product NameIRF640NS
OPNIRF640NSTRLPBF
Product Statusactive
Package NameD2PAK
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size800
Packing TypeTAPE & REEL LEFT
Moisture Level1
OPNIRF640NSTRRPBF
Product Statusnot for new design
Package NameD2PAK
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size800
Packing TypeTAPE & REEL RIGHT
Moisture Level1
OPNIRF640NSPBF
Product Statusnot for new design
Package NameD2PAK
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTUBE
Moisture Level1
Benefits:
  • RoHS Compliant
  • Low RDS(on)
  • Industry-leading quality
  • Dynamic dv/dt Rating
  • Fast Switching
  • Fully Avalanche Rated
  • 175°C Operating Temperature
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF640N,EN336 KB03 八月 2004
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRF640NSEN2 KB18 六月 2001
Saber Model - IRF640NSEN2 KB18 六月 2001
EN IRF640N
EN IDV20E65D1
EN IRF640NS
EN IRF640NS