IRF6613

A 40V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes.

ParametricIRF6613
PackageDirectFET MT
VDS  max40.0V
RDS (on)  max3.4mΩ
RDS (on) (@10V)  max3.4mΩ
RDS (on) (@4.5V)  max4.1mΩ
PolarityN
ID (@ TA=70°C)  max18.0A
ID (@ TA=25°C)  max23.0A
Ptot (@ TA=25°C)  max2.8W
Ptot  max89.0W
QG42.0nC
MountingSMD
Qgd12.7nC
Tj  max150.0°C
VGS  max20.0V
Moisture Sensitivity Level1
RthJC  max1.4K/W
Sales Product NameIRF6613
OPNIRF6613TRPBF
Product Statusactive and preferred
Package NameDIRECTFET
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4800
Packing TypeTAPE & REEL
Moisture Level1
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF6613,EN235 KB05 五月 2006
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRF6613EN2 KB19 八月 2004
Saber Model - IRF6613EN2 KB19 八月 2004
EN IRF6613
EN IDV20E65D1
EN IRF6613
EN IRF6613