IRF6622

A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 59 amperes.

ParametricIRF6622
PackageDirectFET SQ
VDS  max25.0V
RDS (on) (@10V)  max6.3mΩ
RDS (on)  max6.3mΩ
RDS (on) (@4.5V)  max8.9mΩ
PolarityN
ID (@ TA=70°C)  max12.0A
ID (@ TA=25°C)  max15.0A
Ptot (@ TA=25°C)  max2.2W
Ptot  max34.0W
QG11.0nC
MountingSMD
Tj  max150.0°C
VGS  max20.0V
Moisture Sensitivity Level1
Qgd3.8nC
RthJC  max3.7K/W
Sales Product NameIRF6622
OPNIRF6622TRPBF
Product Statusactive
Package NameDIRECTFET
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4800
Packing TypeTAPE & REEL
Moisture Level1
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF6622,EN246 KB21 七月 2006
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRF6622EN2 KB04 六月 2006
Saber Model - IRF6622EN2 KB04 六月 2006
EN IRF6622
EN IDV20E65D1
EN IRF6622
EN IRF6622