IRF6712S

A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 17 amperes optimized with low on resistance.

ParametricIRF6712S
PackageDirectFET SQ
VDS  max25.0V
RDS (on) (@10V)  max4.9mΩ
RDS (on)  max4.9mΩ
RDS (on) (@4.5V)  max8.7mΩ
PolarityN
ID (@ TA=70°C)  max13.0A
ID (@ TA=25°C)  max17.0A
Ptot (@ TA=25°C)  max2.2W
Ptot  max36.0W
QG13.0nC
MountingSMD
Moisture Sensitivity Level1
RthJC  max3.5K/W
Tj  max150.0°C
VGS  max20.0V
Qgd4.4nC
Sales Product NameIRF6712S
OPNIRF6712STRPBF
Product Statusactive and preferred
Package NameDIRECTFET
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4800
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • 100% Rg tested
  • Low Profile (less than 0.7 mm)
  • Dual Sided Cooling
  • Optimized for Control FET Applications
  • Low Conduction Losses
  • Optimized for High Frequency Switching
  • Low Package Inductance
Target Applications:
  • MultiPhase ControlFET
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF6712S,EN242 KB21 二月 2007
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRF6712SPBFEN2 KB21 二月 2007
Saber Model - IRF6712SPBFEN2 KB21 二月 2007
EN IRF6712S
EN IDV20E65D1
EN IRF6712S
EN IRF6712S