IRF6716M

A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 39 amperes optimized with low on resistance.

ParametricIRF6716M
PackageDirectFET MX
VDS  max25.0V
RDS (on)  max1.6mΩ
RDS (on) (@10V)  max1.6mΩ
RDS (on) (@4.5V)  max2.6mΩ
PolarityN
ID (@ TA=70°C)  max31.0A
ID (@ TA=25°C)  max39.0A
Ptot (@ TA=25°C)  max3.6W
Ptot  max78.0W
QG39.0nC
MountingSMD
Moisture Sensitivity Level1
Qgd12.0nC
VGS  max20.0V
RthJC  max1.6K/W
Tj  max150.0°C
Sales Product NameIRF6716M
OPNIRF6716MTRPBF
Product Statusactive and preferred
Package NameDIRECTFET
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size4800
Packing TypeTAPE & REEL
Moisture Level1
Target Applications:
  • eFuse
  • MultiPhase SyncFET
  • ORing
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF6716M,EN275 KB21 二月 2007
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRF6716MPBFEN2 KB21 二月 2007
Saber Model - IRF6716MPBFEN2 KB21 二月 2007
EN IRF6716M
EN IDV20E65D1
EN IRF6716M
EN IRF6716M