IRF6718L2

A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET L6 package rated at 61 amperes optimized with low on resistance.

ParametricIRF6718L2
PackageDirectFET L6
VDS  max25.0V
RDS (on)  max0.7mΩ
RDS (on) (@10V)  max0.7mΩ
RDS (on) (@4.5V)  max1.4mΩ
PolarityN
ID (@ TA=70°C)  max52.0A
ID (@ TA=25°C)  max61.0A
ID (@ TC=25°C)  max270.0A
Ptot (@ TA=25°C)  max4.3W
Ptot  max83.0W
QG64.0nC
MountingSMD
Qgd20.0nC
Tj  max175.0°C
VGS  max20.0V
Moisture Sensitivity Level1
RthJC  max1.8K/W
Sales Product NameIRF6718L2
OPNIRF6718L2TRPBF
Product Statusactive and preferred
Package NameDIRECTFET
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4000
Packing TypeTAPE & REEL
Moisture Level1
Target Applications:
  • eFuse
  • HotSwap
  • ORing
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF6718L2,EN231 KB22 五月 2009
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRF6718L2PBFEN2 KB22 五月 2009
Saber Model - IRF6718L2PBFEN2 KB22 五月 2009
EN IRF6718L2
EN IDV20E65D1
EN IRF6718L2
EN IRF6718L2