IRF6727M

30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MT package rated at 32 amperes optimized with low on resistance.

ParametricIRF6727M
PackageDirectFET MX
VDS  max30.0V
RDS (on) (@10V)  max1.7mΩ
RDS (on)  max1.7mΩ
RDS (on) (@4.5V)  max2.4mΩ
PolarityN with Schottky
ID (@ TA=70°C)  max26.0A
ID (@ TA=25°C)  max32.0A
ID (@ TC=25°C)  max180.0A
Ptot (@ TA=25°C)  max2.8W
Ptot  max89.0W
QG49.0nC
MountingSMD
RthJC  max1.4K/W
Moisture Sensitivity Level1
Qgd16.0nC
Tj  max150.0°C
VGS  max20.0V
Sales Product NameIRF6727M
OPNIRF6727MTRPBF
Product Statusactive and preferred
Package NameDIRECTFET
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size4800
Packing TypeTAPE & REEL
Moisture Level1
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF6727M,EN259 KB15 八月 2007
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRF6727MPBFEN2 KB15 八月 2007
Saber Model - IRF6727MPBFEN2 KB15 八月 2007
EN IRF6727M
EN IDV20E65D1
EN IRF6727M
EN IRF6727M