IRF6802SD

A 25V Dual N-Channel HEXFET Power MOSFET in a DirectFET SA package rated at 16 amperes optimized with low on resistance.

ParametricIRF6802SD
PackageDirectFET SA
VDS  max25.0V
RDS (on) (@10V)  max4.2mΩ
RDS (on)  max4.2mΩ
RDS (on) (@4.5V)  max5.9mΩ
PolarityN+N
PolarityN+N
ID (@ TA=70°C)  max13.0A
ID (@ TA=70°C)  max13.0A
ID (@ TA=25°C)  max16.0A
ID (@ TA=25°C)  max16.0A
Ptot (@ TA=25°C)  max1.7W
QG8.8nC
RthJA  max72.0K/W
Tj  max150.0°C
Moisture Sensitivity Level1
Qgd (typ)3.1nC
VGS  max16.0V
Sales Product NameIRF6802SD
OPNIRF6802SDTRPBF
Product Statusactive and preferred
Package NameDIRECTFET
Completely lead freeyes
Halogen freeno
RoHS compliantyes
Packing Size4800
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • 100% Rg tested
  • Dual N-Channel MOSFET
  • Low Profile (less than 0.7 mm)
  • Dual Sided Cooling
  • Optimized for Control FET Applications
  • Low Conduction Losses
  • Optimized for High Frequency Switching
  • Low Package Inductance
Target Applications:
  • Battery Protection
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF6802SD,EN276 KB23 三月 2012
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
EN IRF6802SD
EN IDV20E65D1