IRF7105PBF-1

25V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

ParametricIRF7105PBF-1
PackageSO-8
VDS  max25.0V
RDS (on)  max100.0mΩ
RDS (on) (@10V)  max100.0mΩ
RDS (on) (@4.5V)  max160.0mΩ
RDS (on)  max250.0mΩ
RDS (on) (@10V)  max250.0mΩ
RDS (on) (@4.5V)  max400.0mΩ
PolarityN+P
ID (@ TA=25°C)  max-2.3A
ID (@ TA=70°C)  max-1.8A
ID (@ TA=70°C)  max2.8A
ID (@ TA=25°C)  max3.5A
Ptot (@ TA=25°C)  max2.0W
QG9.4nC
QG10.0nC
Moisture Sensitivity Level1
Qgd (typ)3.1nC
VGS  max20.0V
Qgd (typ)2.8nC
RthJA  max62.5K/W
Tj  max150.0°C
Sales Product NameIRF7105PBF-1
OPNIRF7105TRPBF-1
Product Statusactive
Package NameSO8
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4000
Packing TypeTAPE & REEL
Moisture Level1
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF7105PBF-1,EN610 KB21 十一月 2013
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
EN IRF7105PBF-1
EN IDV20E65D1