IRF7317

20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

ParametricIRF7317
PackageSO-8
VDS  max20.0V
RDS (on) (@4.5V)  max29.0mΩ
RDS (on) (@2.7V)  max46.0mΩ
RDS (on) (@4.5V)  max58.0mΩ
RDS (on) (@2.7V)  max98.0mΩ
PolarityN+P
ID (@ TA=25°C)  max-5.3A
ID (@ TA=70°C)  max-4.3A
ID (@ TA=70°C)  max5.3A
ID (@ TA=25°C)  max6.6A
Ptot (@ TA=25°C)  max2.0W
QG18.0nC
QG19.0nC
Moisture Sensitivity Level1
Tj  max150.0°C
RthJA  max62.5K/W
Qgd (typ)6.2nC
Qgd (typ)7.7nC
VGS  max12.0V
Sales Product NameIRF7317
OPNIRF7317TRPBF
Product Statusactive
Package NameSO8
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4000
Packing TypeTAPE & REEL
Moisture Level1
OPNIRF7317PBF
Product Statusnot for new design
Package NameSO8
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size95
Packing TypeTUBE
Moisture Level1
Benefits:
  • RoHS Compliant
  • Low RDS(on)
  • Dynamic dv/dt Rating
  • Fast Switching
  • Dual N and P-Channel MOSFET
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF7317,EN236 KB10 七月 2004
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
Simulation Models
TitleSizeDateVersion
Saber Model - IRF7317PEN2 KB18 六月 2001
Saber Model - IRF7317NEN2 KB18 六月 2001
Spice Model - IRF7317PEN1 KB18 六月 2001
Spice Model - IRF7317NEN2 KB18 六月 2001
EN IRF7317
EN IDV20E65D1
EN IRF7317
EN IRF7317
EN IRF7317
EN IRF7317