IRF7319

30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

ParametricIRF7319
PackageSO-8
VDS  max30.0V
RDS (on) (@10V)  max29.0mΩ
RDS (on)  max29.0mΩ
RDS (on) (@4.5V)  max46.0mΩ
RDS (on) (@10V)  max58.0mΩ
RDS (on)  max58.0mΩ
RDS (on) (@4.5V)  max98.0mΩ
PolarityN+P
ID (@ TA=25°C)  max-4.9A
ID (@ TA=70°C)  max-3.9A
ID (@ TA=70°C)  max5.2A
ID (@ TA=25°C)  max6.5A
Ptot (@ TA=25°C)  max2.0W
QG22.0nC
QG23.0nC
RthJA  max62.5K/W
Tj  max150.0°C
VGS  max20.0V
Moisture Sensitivity Level1
Qgd (typ)6.4nC
Qgd (typ)5.9nC
Sales Product NameIRF7319
OPNIRF7319PBF
Product Statusnot for new design
Package NameSO8
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size95
Packing TypeTUBE
Moisture Level1
OPNIRF7319TRPBF
Product Statusactive
Package NameSO8
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4000
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • Low RDS(on)
  • Dynamic dv/dt Rating
  • Fast Switching
  • Dual N and P-Channel MOSFET
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF7319,EN224 KB10 七月 2004
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
EN IRF7319
EN IDV20E65D1