IRF7342

-55V Dual P-Channel HEXFET Power MOSFET in a SO-8 package

ParametricIRF7342
PackageSO-8
VDS  max-55.0V
RDS (on) (@10V)  max105.0mΩ
RDS (on)  max105.0mΩ
RDS (on) (@4.5V)  max170.0mΩ
PolarityP+P
ID (@ TA=25°C)  max-3.4A
ID (@ TA=25°C)  max-3.4A
ID (@ TA=70°C)  max-2.7A
ID (@ TA=70°C)  max-2.7A
Ptot (@ TA=25°C)  max2.0W
QG26.0nC
Moisture Sensitivity Level1
RthJA  max62.5K/W
Tj  max150.0°C
VGS  max20.0V
Qgd (typ)8.4nC
Sales Product NameIRF7342
OPNIRF7342PBF
Product Statusnot for new design
Package NameSO8
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size95
Packing TypeTUBE
Moisture Level1
OPNIRF7342TRPBF
Product Statusactive
Package NameSO8
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4000
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • Low RDS(on)
  • Dynamic dv/dt Rating
  • Fast Switching
  • Dual P-Channel MOSFET
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF7342,EN159 KB10 十一月 2004
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRF7342EN2 KB18 六月 2001
Saber Model - IRF7342EN2 KB18 六月 2001
EN IRF7342
EN IDV20E65D1
EN IRF7342
EN IRF7342