IRF8301M

A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package rated at 34 amperes optimized with low on resistance.

ParametricIRF8301M
PackageDirectFET MT
VDS  max30.0V
RDS (on)  max1.5mΩ
RDS (on) (@10V)  max1.5mΩ
RDS (on) (@4.5V)  max2.4mΩ
PolarityN
ID (@ TA=70°C)  max27.0A
ID (@ TA=25°C)  max34.0A
ID (@ TC=25°C)  max192.0A
Ptot (@ TA=25°C)  max2.8W
Ptot  max89.0W
QG51.0nC
MountingSMD
Moisture Sensitivity Level1
Qgd16.0nC
Tj  max150.0°C
VGS  max20.0V
RthJC  max1.4K/W
Sales Product NameIRF8301M
OPNIRF8301MTRPBF
Product Statusactive and preferred
Package NameDIRECTFET
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size4800
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • Ultra-low RDS(on)
  • Low Profile (less than 0.7 mm)
  • Dual Sided Cooling Compatible
  • Ultra-low Package Inductance
  • Optimized for high speed switching or high current switch (Power Tool)
  • Low Conduction and Switching Losses
  • Compatible with existing Surface Mount Techniques
  • StrongIRFET™
Target Applications:
  • Battery Operated Drive
  • Battery Protection
  • eFuse
  • Full-Bridge
  • Isolated Primary Side MOSFETs
  • Isolated Secondary Side SyncRec MOSFETs
  • Load Switch High Side
  • Load Switch Low Side
  • ORing
  • Point of Load SyncFET
  • Push-Pull
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF8301M,EN339 KB15 三月 2013
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRF8301MEN2 KB15 三月 2013
Saber Model - IRF8301MEN2 KB15 三月 2013
EN IRF8301M
EN IDV20E65D1
EN IRF8301M
EN IRF8301M