IRF8306M

30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 23 amperes optimized with low on resistance.

ParametricIRF8306M
PackageDirectFET MX
VDS  max30.0V
RDS (on)  max2.5mΩ
RDS (on) (@10V)  max2.5mΩ
RDS (on) (@4.5V)  max3.6mΩ
PolarityN with Schottky
ID (@ TA=70°C)  max18.0A
ID (@ TA=25°C)  max23.0A
ID (@ TC=25°C)  max140.0A
Ptot (@ TA=25°C)  max2.1W
Ptot  max75.0W
QG25.0nC
MountingSMD
Qgd6.7nC
RthJC  max1.66K/W
Tj  max150.0°C
Moisture Sensitivity Level1
VGS  max20.0V
Sales Product NameIRF8306M
OPNIRF8306MTRPBF
Product Statusdiscontinued
Package NameDIRECTFET
Completely lead freeyes
Halogen freeno
RoHS compliantyes
Packing Size4800
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • Low Profile (less than 0.7 mm)
  • Dual Sided Cooling
  • Low Conduction Losses
  • Optimized for High Frequency Switching
  • Low Package Inductance
  • Integrated Monolithic Sckottky Diode
Target Applications:
  • Battery Protection
  • Isolated Primary Side MOSFETs
  • Isolated Secondary Side SyncRec MOSFETs
  • Load Switch High Side
  • Load Switch Low Side
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF8306M,EN261 KB05 十二月 2011
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
EN IRF8306M
EN IDV20E65D1