IRF8327S

A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 14 amperes optimized with low on resistance.

ParametricIRF8327S
PackageDirectFET SQ
VDS  max30.0V
RDS (on)  max7.3mΩ
RDS (on) (@10V)  max7.3mΩ
RDS (on) (@4.5V)  max10.9mΩ
PolarityN
ID (@ TA=70°C)  max11.0A
ID (@ TA=25°C)  max14.0A
ID (@ TC=25°C)  max60.0A
Ptot (@ TA=25°C)  max2.2W
Ptot  max42.0W
QG9.2nC
MountingSMD
Moisture Sensitivity Level1
Qgd3.0nC
Tj  max150.0°C
VGS  max20.0V
RthJC  max3.0K/W
Sales Product NameIRF8327S
OPNIRF8327STRPBF
Product Statusnot for new design
Package NameDIRECTFET
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4800
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • 100% Rg tested
  • Low Profile (less than 0.7 mm)
  • Dual Sided Cooling
  • Optimized for Control FET Applications
  • Low Conduction Losses
  • Optimized for High Frequency Switching
  • Low Package Inductance
Target Applications:
  • Battery Protection
  • Isolated Primary Side MOSFETs
  • Isolated Secondary Side SyncRec MOSFETs
  • Load Switch High Side
  • Load Switch Low Side
  • Point of Load ControlFET
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF8327S,EN259 KB05 十二月 2011
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRF8327SPBFEN2 KB05 十二月 2011
Saber Model - IRF8327SPBFEN2 KB05 十二月 2011
EN IRF8327S
EN IDV20E65D1
EN IRF8327S
EN IRF8327S