IRF9953

-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package

ParametricIRF9953
PackageSO-8
VDS  max-30.0V
RDS (on) (@10V)  max250.0mΩ
RDS (on)  max250.0mΩ
RDS (on) (@4.5V)  max400.0mΩ
PolarityP+P
ID (@ TA=25°C)  max-2.3A
ID (@ TA=25°C)  max-2.3A
ID (@ TA=70°C)  max-1.8A
ID (@ TA=70°C)  max-1.8A
Ptot (@ TA=25°C)  max2.0W
QG6.1nC
Qgd (typ)1.1nC
Tj  max150.0°C
Moisture Sensitivity Level1
RthJA  max62.5K/W
VGS  max20.0V
Sales Product NameIRF9953
OPNIRF9953TRPBF
Product Statusactive
Package NameSO8
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4000
Packing TypeTAPE & REEL
Moisture Level1
OPNIRF9953PBF
Product Statusdiscontinued
Package NameSO8
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size95
Packing TypeTUBE
Moisture Level1
Benefits:
  • RoHS Compliant
  • Low RDS(on)
  • Dynamic dv/dt Rating
  • Fast Switching
  • Dual P-Channel MOSFET
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF9953,EN207 KB10 七月 2004
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
EN IRF9953
EN IDV20E65D1