IRFHM792

100V Dual N-Channel HEXFET Power MOSFET in a PQFN 3.3mm x3.3mm Lead Free package

ParametricIRFHM792
PackagePQFN 3.3 x 3.3 E
VDS  max100.0V
RDS (on)  max195.0mΩ
RDS (on) (@10V)  max195.0mΩ
PolarityN+N
PolarityN+N
ID (@ TA=70°C)  max1.8A
ID (@ TA=70°C)  max1.8A
ID (@ TA=25°C)  max2.3A
ID (@ TA=25°C)  max2.3A
Ptot (@ TA=25°C)  max2.3W
QG4.2nC
RthJA  max55.0K/W
Moisture Sensitivity Level1
Qgd (typ)1.3nC
Tj  max150.0°C
VGS  max20.0V
Sales Product NameIRFHM792
OPNIRFHM792TRPBF
Product Statusactive and preferred
Package NamePQFN 3.3X3.3 8L
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4000
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • Low RDS(on)
  • Low Profile (less than 1.2 mm)
  • Industry-Standard Pinout
  • Compatible with Existing Surface Mount Techniques
  • Qualified INDUSTRIAL
  • Qualified MSL1
  • Dual N-Channel MOSFET
Data Sheet
TitleSizeDateVersion
Data Sheet - IRFHM792,EN262 KB27 四月 2011
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRFHM792TRPBFEN2 KB27 四月 2011
Saber Model - IRFHM792TRPBFEN2 KB27 四月 2011
EN IRFHM792
EN IDV20E65D1
EN IRFHM792
EN IRFHM792