IRFU13N20D

200V Single N-Channel HEXFET Power MOSFET in a I-Pak package

ParametricIRFU13N20D
PackageIPAK (TO-251)
VDS  max200.0V
RDS (on)  max235.0mΩ
RDS (on) (@10V)  max235.0mΩ
PolarityN
ID (@ TC=100°C)  max9.5A
ID  max14.0A
ID (@ TC=25°C)  max14.0A
Ptot  max110.0W
QG25.0nC
MountingTHT
Qgd12.0nC
RthJC  max1.4K/W
VGS  max30.0V
Tj  max175.0°C
Sales Product NameIRFU13N20D
OPNIRFU13N20DPBF
Product Statusactive
Package NameIPAK
Completely lead freeno
Halogen freeno
RoHS compliantyes
Packing Size75
Packing TypeTUBE
Moisture Level1
Benefits:
  • RoHS Compliant
  • Industry-leading quality
  • Fully Characterized Avalanche Voltage and Current
  • Low Gate-to-Drain Charge to Reduce Switching Losses
  • Fully Characterized Capacitance Including Effective Coss to Simplify Design
Data Sheet
TitleSizeDateVersion
Data Sheet - IRFR13N20D,EN684 KB05 七月 2011
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
EN IRFU13N20D
EN IDV20E65D1