IRL60S216

60V Single N-Channel HEXFET Power MOSFET in a D2PAK

ParametricIRL60S216
PackageD2PAK (TO-263)
VDS  max60.0V
RDS (on) (@10V)  max1.95mΩ
RDS (on) (@4.5V)  max2.2mΩ
PolarityN
ID (@ TC=100°C)  max210.0A
ID  max210.0A
ID (@ TC=25°C)  max298.0A
Ptot  max375.0W
QG170.0nC
MountingSMD
Moisture Sensitivity Level1
RthJC  max0.4K/W
RthJC  max175.0K/W
Qgd80.0nC
VGS  max20.0V
Sales Product NameIRL60S216
OPNIRL60S216
Product Statusactive and preferred
Package NameD2PAK
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size800
Packing TypeTAPE & REEL LEFT
Moisture Level1
Benefits:
  • Optimized for Logic Level Drive
  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
  • Fully Characterized Capacitance and Avalanche SOA
  • Enhanced body diode dV/dt and dI/dt Capability
  • Lead-Free
  • RoHS Compliant, Halogen-Free
Data Sheet
TitleSizeDateVersion
Data Sheet - IRL60S216,EN717 KB21 一月 2016
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
Simulation Models
TitleSizeDateVersion
Spice File - IRL60S_SL216EN2 KB29 一月 2016
Saber File - IRL60S_SL216EN2 KB29 一月 2016
EN IRL60SL216
EN IDV20E65D1
EN IRL60SL216
EN IRL60SL216