IRS2108

Half Bridge Driver, Soft Turn-On, Separate High and Low Side Inputs, Fixed 540ns Deadtime in a 8-Lead package

ParametricIRS2108
TopologyHalf Bridge
Voltage Class600.0V
Output Current (Source)290.0mA
Output Current (Sink)600.0mA
Channels2.0
Moisture Sensitivity Level2
QualificationIndustrial
TechnologyHVIC
UVLOVcc / Vbs
VBSUV+ / VCCUV+    (min)  (max)8.9V  (8.0V)  (9.8V)
VBSUV- / VCCUV-    (min)  (max)8.2V  (7.4V)  (9.0V)
toff200.0ns
ton220.0ns
dt/sdt (typ)540 ns
Input Active StateLIN
Sales Product NameIRS2108
OPNIRS2108PBF
Product Statusactive and preferred
Package NamePDIP8
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTUBE
Moisture LevelTHP
OPNIRS2108STRPBF
Product Statusactive and preferred
Package NameSOIC 8N
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size2500
Packing TypeTAPE & REEL
Moisture Level2
OPNIRS2108SPBF
Product Statusactive and preferred
Package NameSOIC 8N
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size95
Packing TypeTUBE
Moisture Level2
Benefits:
  • Floating channel designed for bootstrap operation
  • Fully operational to +600 V
  • Tolerant to negative transient voltage, dV/dt immune
  • Gate drive supply range from 10 V to 20 V
  • Undervoltage lockout for both channels
  • 3.3 V, 5 V, and 15 V input logic compatible
  • Cross-conduction prevention logic
  • Matched propagation delay for both channels
  • High-side output in phase with HIN input
  • Low-side output out of phase with LIN input
  • Logic and power ground +/- 5 V offset
  • Internal 540 ns deadtime, and programmable up to 5 µs with one external RDT resistor (IRS21084)
  • Lower di/dt gate driver for better noise immunity
  • RoHS compliant
Target Applications:
  • Air Conditioner
  • Dishwasher
  • Dryer
  • Fan
  • Induction Cooker
  • Pump
  • Refridgeration
  • Solar
  • UPS
  • Washing Machine
  • Welding
功能框图
Data Sheet
TitleSizeDateVersion
Data Sheet - IRS2108,EN1.1 MB13 六月 2006
Application Notes
TitleSizeDateVersion
Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTsEN125 KB27 十月 2004
HV Floating MOS Gate DriversEN425 KB27 十月 2004
Article
TitleSizeDateVersion
Low Gate Charge HEXFETS simplify Gate Drive and Lower CostEN167 KB01 四月 2000
Using Control ICs to Generate Neg. Gate Bias for MOSFETs & IGBTsEN607 KB01 四月 2000
Product Catalogue
TitleSizeDateVersion
Short Form Catalog - May 2016EN4.4 MB09 五月 201601_00
EN IRS21084
EN IR21531S
EN IR21531S
EN IR21531S
EN IR21531S
EN IDV20E65D1