IRS21171S

Single High Side Driver, Noninverting Input. IN Voltage Threshold 2.5V & 0.8V Packaged in a 8-Lead SOIC

ParametricIRS21171S
TopologySingle Channel
Voltage Class600.0V
Output Current (Source)290.0mA
Output Current (Sink)600.0mA
Channels1.0
Moisture Sensitivity Level2
QualificationIndustrial
TechnologyHVIC
UVLOVcc / Vbs
VBSUV+ / VCCUV+    (min)  (max)8.6V  (7.6V)  (9.6V)
VBSUV- / VCCUV-    (min)  (max)8.2V  (7.2V)  (9.2V)
toff160.0ns
ton160.0ns
Features3.3V and 5V logic compatible
Single InputYes
Sales Product NameIRS21171S
OPNIRS21171SPBF
Product Statusactive and preferred
Package NameSOIC 8N
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size95
Packing TypeTUBE
Moisture Level2
OPNIRS21171STRPBF
Product Statusactive and preferred
Package NameSOIC 8N
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size2500
Packing TypeTAPE & REEL
Moisture Level2
Benefits:
  • Floating channel designed for bootstrap operation
  • Fully operational to +600 V
  • Tolerant to negative transient voltage, dV/dt immune
  • Gate drive supply range from 10 V to 20V
  • Undervoltage lockout
  • CMOS Schmitt-triggered inputs with pull-down
  • Output in phase with input (IRS2117) or out of phase with input (IRS2118)
  • RoHS compliant
Target Applications:
  • Lighting HID
功能框图
Data Sheet
TitleSizeDateVersion
Data Sheet - IRS2117,EN897 KB28 七月 2006
Application Notes
TitleSizeDateVersion
Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTsEN125 KB27 十月 2004
HV Floating MOS Gate DriversEN425 KB27 十月 2004
Article
TitleSizeDateVersion
Using Control ICs to Generate Neg. Gate Bias for MOSFETs & IGBTsEN607 KB01 四月 2000
Low Gate Charge HEXFETS simplify Gate Drive and Lower CostEN167 KB01 四月 2000
Product Catalogue
TitleSizeDateVersion
Short Form Catalog - May 2016EN4.4 MB09 五月 201601_00
EN IRS2118
EN IR21531S
EN IR21531S
EN IR21531S
EN IR21531S
EN IDV20E65D1