IRS2308

High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-Lead package

ParametricIRS2308
TopologyHalf Bridge
Voltage Class600.0V
Output Current (Source)290.0mA
Output Current (Sink)600.0mA
Channels2.0
Moisture Sensitivity Level2
QualificationIndustrial
TechnologyHVIC
UVLOVcc / Vbs
VBSUV+ / VCCUV+    (min)  (max)8.9V  (8.0V)  (9.8V)
VBSUV- / VCCUV-    (min)  (max)8.2V  (7.4V)  (9.0V)
toff200.0ns
ton220.0ns
dt/sdt (typ)540 ns
Sales Product NameIRS2308
OPNIRS2308STRPBF
Product Statusactive and preferred
Package NameSOIC 8N
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size2500
Packing TypeTAPE & REEL
Moisture Level2
OPNIRS2308PBF
Product Statusactive and preferred
Package NamePDIP8
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTUBE
Moisture LevelTHP
OPNIRS2308SPBF
Product Statusactive and preferred
Package NameSOIC 8N
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size95
Packing TypeTUBE
Moisture Level2
Benefits:
  • Floating channel designed for bootstrap operation
  • Fully operational to +600 V
  • Tolerant to negative transient voltage, dV/dt immune
  • Gate drive supply range from 10 V to 20 V
  • Undervoltage lockout for both channels
  • 3.3 V, 5 V, and 15 V input logic compatible
  • Cross-conduction prevention logic
  • Matched propagation delay for both channels
  • Outputs in phase with inputs
  • Logic and power ground +/- 5 V offset.
  • Internal 540 ns deadtime
  • Lower di/dt gate driver for better noise immunity
  • RoHS compliant
Target Applications:
  • Air Conditioner
  • Dishwasher
  • Dryer
  • Fan
  • Lighting HID
  • Induction Cooker
  • Pump
  • Refridgeration
  • Solar
  • UPS
  • Washing Machine
  • Welding
功能框图
Data Sheet
TitleSizeDateVersion
Data Sheet - IRS2308,EN296 KB21 四月 2006
Application Notes
TitleSizeDateVersion
Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTsEN125 KB27 十月 2004
HV Floating MOS Gate DriversEN425 KB27 十月 2004
Article
TitleSizeDateVersion
Low Gate Charge HEXFETS simplify Gate Drive and Lower CostEN167 KB01 四月 2000
Using Control ICs to Generate Neg. Gate Bias for MOSFETs & IGBTsEN607 KB01 四月 2000
Product Catalogue
TitleSizeDateVersion
Short Form Catalog - May 2016EN4.4 MB09 五月 201601_00
EN IRS2308
EN IR21531S
EN IR21531S
EN IR21531S
EN IR21531S
EN IDV20E65D1