PTAB182002FC V1

High Power RF LDMOS FET, 190 W, 28 V, 1805 – 1880 MHz

ParametricPTAB182002FC V1
Flange TypeEarless
MatchingI/O
Frequency Band  min  max1805.0MHz  1880.0MHz
P1dB190.0W
Supply Voltage28.0V
Pout29.0W
Gain15.5dB
Test SignalWCDMA
Sales Product NamePTAB182002FC V1
OPNPTAB182002FCV1R0XTMA1
Product Statusactive and preferred
Package NameH-37248-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTAPE & REEL
OPNPTAB182002FCV1XWSA1
Product Statusdiscontinued
Package NameH-37248-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeBLISTER TRAY
Summary of Features:
  • Asymmetric Doherty Design - Main: P1dB = 70 W Typ - Peak: P1dB = 120 W Typ
  • Broadband input and output matching
  • Typical two-carrier WCDMA performance at 1842 MHz, 28 V (Doherty Configuration) - Average output power = 44.6 dBm - Linear Gain = 15.5 dB - Efficiency = 46% - IMD = -25 dBc
  • Increased negative gate-source voltage range for improved performance in Doherty amplifiers
  • Capable of handling 3:1 VSWR @ 30 V, 50 W avg output power. Single-carrier WCDMA (10 dB PAR), Doherty test fixture.
  • Integrated ESD protection
  • Pb-free and RoHS compliant
  • Package: H-37248-4, earless
Data Sheet
TitleSizeDateVersion
PTAB 182002FC DS,EN632 KB09 六月 201604_01
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 五月 201505_00
Package Data
TitleSizeDateVersion
H-37248-4-1 | PTAB182002FCV1XWSA1EN344 KB11 四月 201601_00
Development Tools
TitleSizeDateVersion
PTAB182002FC RD192 KB30 五月 201202_01
EN PTAB182002FC+V1
EN where-to-buy
EN PTAB182002FC+V1
PTAB182002FC RD PTAB182002FC+V1