PTFA192001E V4

High Power RF LDMOS FETs, 200 W, 30 V, 1930 – 1990 MHz

ParametricPTFA192001E V4
Flange TypeBolt Down
MatchingI/O
Frequency Band  min  max1930.0MHz  1990.0MHz
P1dB200.0W
Supply Voltage30.0V
Pout50.0W
Gain15.6dB
Test SignalWCDMA
Sales Product NamePTFA192001E V4
OPNPTFA192001EV4XWSA1
Product Statusdiscontinued
Package NameH-36260-2
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size35
Packing TypeBLISTER TRAY
OPNPTFA192001EV4R0XTMA1
Product Statusnot for new design
Package NameH-36260-2
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTAPE & REEL
Summary of Features:
  • Broadband input and output matching
  • Typical two-carrier WCDMA performance at 1990 MHz, 30 V - Average output power = 47 dBm - Linear Gain = 15.9 dB - Efficiency = 27% - IMD = -36 dBc - ACPR = -41 dBc
  • Typical CW performance, 1960 MHz, 30 V - Output power at P1dB = 240 W - Efficiency = 57%
  • Capable of handling 5:1 VSWR @ 30 V, 200 W (CW) output power
  • Integrated ESD protection. Human Body Model, Class 2 (minimum)
  • Excellent thermal stability, low HCI drift
  • Pb-free and RoHS compliant
  • Package: H-362620-2, bolt-down
Data Sheet
TitleSizeDateVersion
Infineon-PTFA192001EF-DS-v07_00-EN,EN722 KB04 三月 201507_00
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 五月 201505_00
Reference Design
TitleSizeDateVersion
PTFA192001EF Reference Design99 KB20 五月 200801_00
Package Data
TitleSizeDateVersion
H-36260-2-1 | PTFA192001EV4XWSA1EN345 KB11 四月 201601_00
EN PTFA192001E+V4
EN where-to-buy
PTFA192001EF Reference Design PTFA192001E+V4
EN PTFA192001E+V4