PTFB182557SH V1

High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz

ParametricPTFB182557SH V1
Flange TypeSurface Mount
MatchingI/O
Frequency Band  min  max1805.0MHz  1880.0MHz
P1dB250.0W
Supply Voltage28.0V
Pout60.0W
Gain19.0dB
Test SignalWCDMA
Sales Product NamePTFB182557SH V1
OPNPTFB182557SHV1XWSA1
Product Statusnot for new design
Package NameH-34288G-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size35
Packing TypeBLISTER TRAY
Summary of Features:
  • Broadband input and output matching
  • Optimized for use as peak side in Doherty amplifiers
  • Typical two-carrier WCDMA performance at 1842 MHz, 28 V, 3GPP signal, 8.0 dB PAR, 10 MHz carrier spacing - 75 W average output power - 18.5 dB gain - 31% efficiency - –31 dBc IMD, - –36 dBc ACPR
  • Typical CW performance at 1842 MHz, 28 V - 250 W output power at P1dB - 49% efficiency - 18 dB gain
  • Capable of handling 10:1 VSWR @ 28 V, 240 W (CW) output power
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS-compliant
  • Package: H-34288G-4/2, gull wing, surface mount
Data Sheet
TitleSizeDateVersion
PTFB 182557SH DS,EN545 KB26 七月 201202_00
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 五月 201505_00
Package Data
TitleSizeDateVersion
H-34288G-4/2-1 | PTFB182557SHV1XWSA1EN344 KB11 四月 201601_00
Development Tools
TitleSizeDateVersion
PTFB 182557SH RD209 KB20 六月 201201_01
EN PTFB182557SH+V1
EN where-to-buy
EN PTFB182557SH+V1
PTFB 182557SH RD PTFB182557SH+V1