PTFB193408SV V1

High Power RF LDMOS FET, 340 W, 30 V, 1930 – 1990 MHz

ParametricPTFB193408SV V1
Flange TypeSurface Mount
MatchingI/O
Frequency Band  min  max1930.0MHz  1990.0MHz
P1dB340.0W
Supply Voltage30.0V
Pout90.0W
Gain19.0dB
Test SignalWCDMA
Sales Product NamePTFB193408SV V1
OPNPTFB193408SVV1XWSA1
Product Statusdiscontinued
Package NameH-34275G-6
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size35
Packing TypeBLISTER TRAY
Summary of Features:
  • Broadband input and output matching
  • Wide video bandwidth
  • Typical single-carrier WCDMA performance at 1990 MHz, 30 V    - Output power = 100 W   - Efficiency = 33%     - Gain = 19 dB   - PAR = 7.5 dB @ 0.01% CCDF   - ACPR @ 5 MHz = -35 dBc
  • Increased negative gate-source voltage range for improved performance in Doherty amplifiers
  • Capable of handling 10:1 VSWR @ 30 V, 340 W (CW) output power
  • Integrated ESD protection
  • Excellent thermal stability
  • Pb-free and RoHS compliant
  • Package: H-34275G-6/2, gull wing,  surface mount
Data Sheet
TitleSizeDateVersion
PTFB 193408SV-V1,EN635 KB08 六月 201604_00
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 五月 201505_00
Reference Design
TitleSizeDateVersion
PTFB 193408SV-V1 Circuit Files280 KB10 十月 201101_00
Package Data
TitleSizeDateVersion
H-34275G-6/2-1 | PTFB193408SVV1XWSA1EN343 KB11 四月 201601_00
EN PTFB193408SV+V1
EN where-to-buy
PTFB 193408SV-V1 Circuit Files PTFB193408SV+V1
EN PTFB193408SV+V1