PTFB213208SV V2

High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz

ParametricPTFB213208SV V2
Flange TypeSurface Mount
MatchingI/O
Frequency Band  min  max2110.0MHz  2170.0MHz
P1dB320.0W
Supply Voltage28.0V
Pout50.0W
Gain17.0dB
Test SignalWCDMA
Sales Product NamePTFB213208SV V2
OPNPTFB213208SVV2XWSA1
Product Statusnot for new design
Package NameH-37275G-6
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size35
Packing TypeBLISTER TRAY
Summary of Features:
  • Broadband internal matching
  • Wide video bandwidth
  • Typical pulsed CW performance, 2140 MHz, 28 V, combined outputs - 343 W output power @ P1dB - 16.5 dB gain - 54% efficiency
  • Typical single-carrier WCDMA performance, 2140 MHz, 28 V   - 50 dBm avg output power - 17 dB gain - 32% efficiency
  • Capable of handling 10:1 VSWR @ 28 V, 320 W (CW) output power
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS compliant
  • Package: H-37275-6/2, gull wing, surface mount
Data Sheet
TitleSizeDateVersion
PTFB 213208SV V2,EN215 KB20 八月 201404_00
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 五月 201505_00
Package Data
TitleSizeDateVersion
H-37275G-6/2-1 | PTFB213208SVV2XWSA1EN344 KB11 四月 201601_00
Development Tools
TitleSizeDateVersion
PTFB 213208FSV RD126 KB11 十二月 201202_01
EN PTFB213208SV+V2
EN where-to-buy
EN PTFB213208SV+V2
PTFB 213208FSV RD PTFB213208SV+V2