PTVA104501EH V1

High Power RF LDMOS FET, 450 W, 50 V, 960 – 1215 MHz

ParametricPTVA104501EH V1
Flange TypeBolt Down
MatchingI/O
Frequency Band  min  max960.0MHz  1215.0MHz
P1dB450.0W
Supply Voltage50.0V
Gain17.0dB
Test SignalPulsed
Sales Product NamePTVA104501EH V1
OPNPTVA104501EHV1R0XTMA1
Product Statusactive and preferred
Package NameH-33288-2
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTAPE & REEL
OPNPTVA104501EHV1XWSA1
Product Statusdiscontinued
Package NameH-33288-2
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size40
Packing TypeBLISTER TRAY
Summary of Features:
  • Broadband input and output matching
  • High gain and efficiency
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS compliant
  • Capable of withstanding a 10:1 load mismatch (all phase angles) at 450 W peak under RF pulse, 128 μS, 10% duty cycle
  • Package: H-33288-2, bolt-down
Data Sheet
TitleSizeDateVersion
PTVA 104501EH DS,EN622 KB19 四月 201602_01
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 五月 201505_00
Product Brief
TitleSizeDateVersion
Infineon RF Power 50V TransistorsEN330 KB25 五月 201603_00
Reference Design
TitleSizeDateVersion
PTVA104501EH RD462 KB14 八月 201402_00
Package Data
TitleSizeDateVersion
H-33288-2-1 | PTVA104501EHV1XWSA1EN345 KB11 四月 201601_00
EN PTVA104501EH+V1
EN where-to-buy
EN EVAL+ISO2H823V25
PTVA104501EH RD PTVA104501EH+V1
EN PTVA104501EH+V1