PXAC180602MD V1 R500

High Power RF LDMOS FET, 60 W, 28 V, 1805 – 1880 MHz

ParametricPXAC180602MD V1 R500
MatchingI/O
Frequency Band  min  max1805.0MHz  1880.0MHz
P1dB60.0W
Supply Voltage28.0V
Pout8.9W
Gain17.7dB
Test SignalWCDMA
Sales Product NamePXAC180602MD V1 R500
OPNPXAC180602MDV1R500XUMA1
Product Statusactive and preferred
Package NamePG-HB1DSO-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size500
Packing TypeTAPE & REEL
Moisture Level3
Summary of Features:
  • Broadband internal input and output matching
  • Asymmetric Doherty design - Main : P1dB = 20 W Typ - Peak : P1dB = 40 W Typ
  • Typical Pulsed CW performance, 1880 MHz, 28 V, 160 μs pulse width, 10% duty cycle, class AB, Doherty Configuration - Output power at P1dB = 10 W - Efficiency = 58% - Gain at P3dB = 19 dB
  • Integrated ESD protection
  • Human Body Model, Class 1B (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS compliant
  • Package : PG-HB1DSO-4
Data Sheet
TitleSizeDateVersion
PXAC180602MD,EN732 KB18 六月 201502_01
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 五月 201505_00
Application Notes
TitleSizeDateVersion
Circuit Assembly with Packages PG-HBSOF-4 and PG-HB1SOF-4EN861 KB16 十月 201401_00
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2015-04-17_12-35-09_MA001346732_PG-HB1DSO-4-1.pdfEN28 KB17 四月 201501_00
Reference Design
TitleSizeDateVersion
Infineon-PXAC180602MD RD-RD-v06_00-ENEN59 KB20 三月 201506_00
Package Data
TitleSizeDateVersion
PG-HB1DSO-4-1 | PXAC180602MDV1R500XUMA1EN345 KB11 四月 201601_00
EN PXAC180602MD+V1+R500
EN where-to-buy
EN PXFC192207NF+V1+R500
EN PXAC180602MD+V1+R500
EN PXAC180602MD+V1+R500
EN PXAC180602MD+V1+R500